mabm_05
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Hii...
I already fabricated PIN diode using boron (P), Si (N-type), and phosphorus (N). For the method, I etching two contact at Si wafer then doping the boron and phosphorus... there are width I-region (Si) between the contact.
A already measured the I-V characteristic of PIN diode but don't have any formula or reference for compare with the measurement. I want know the formula to prove my IV Characteristic PIN diode. help me...??
Picture my fabricated PIN diode :
http://1.bp.blogspot.com/_cyXmnum7K...AAASE/wP1YD3xEjJg/s1600/PIN+diode+2+copy.jpg"
I already fabricated PIN diode using boron (P), Si (N-type), and phosphorus (N). For the method, I etching two contact at Si wafer then doping the boron and phosphorus... there are width I-region (Si) between the contact.
A already measured the I-V characteristic of PIN diode but don't have any formula or reference for compare with the measurement. I want know the formula to prove my IV Characteristic PIN diode. help me...??
Picture my fabricated PIN diode :
http://1.bp.blogspot.com/_cyXmnum7K...AAASE/wP1YD3xEjJg/s1600/PIN+diode+2+copy.jpg"
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