Forward resistance of the Base -Emmiter Junction?

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rclakmal
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Homework Statement



Forward resistance of the Base -Emitter Junction showed a value of 12ohms when it was measured by (x1) resistance scale of an analogue multimeter .And it showed 70ohms when it was measured using (x 10)
scale factor .The variation in the two readings occurs due to

1.the presence of Base Collector junction
2.thin base region
3.Different bias potentials applied by the meter
4.An error in the multimeter

Homework Equations





The Attempt at a Solution


This is an MCQ question and i don't have any-works to show >But i personally think answer should be C.Can anyone help me !
 
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rclakmal said:
i personally think answer should be C.

It sounds like you might be guessing. If you explain your thought process, it would be easier to help you.
 
The transistor has a dynamic emitter resistance, Re, which depends on the collector current. Collector current is a function of...
 
The base emitter junction of a BJT behaves just like any other diode and its resistance varies with voltage. The curve of this function is very non linear.

So, yes, I think your answer is correct.
3.Different bias potentials applied by the meter