Full well capacity and dynamic range of CCD

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SUMMARY

The discussion focuses on the full well capacity and dynamic range of CCD cameras, specifically questioning how these metrics are determined. It highlights that full well capacity is often calculated using "rule of thumb methods" based on pixel size, clock phases, and the average number of electrons per micron squared of the doped substrate. Additionally, the inquiry addresses whether saturation current measurements are used for determining full well capacity and how read noise is quantified. The provided link from Andor serves as a resource for further details on various CCD cameras.

PREREQUISITES
  • Understanding of CCD camera technology
  • Knowledge of pixel architecture in imaging sensors
  • Familiarity with electronic measurement techniques
  • Basic concepts of noise in imaging systems
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  • Research "CCD camera full well capacity calculations"
  • Explore "saturation current measurement techniques for CCDs"
  • Learn about "read noise quantification methods in imaging sensors"
  • Investigate "pixel size effects on CCD performance"
USEFUL FOR

This discussion is beneficial for optical engineers, imaging scientists, and anyone involved in the design or analysis of CCD camera systems, particularly in understanding performance metrics like full well capacity and dynamic range.

chenhon5
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Hi,

I have some question about the full well capacity and dynamic range of the CCD camera. The following link lists some full well capacity and dynamic ragnes of some CCD cameras:
http://www.andor.com/learning/digital_cameras/?docid=321

My question is how they obtain the electron numbers of the "full well capacity e-" and "read noise e-". Do they calculate the full well capacity based on the size of the pixels, or they obtained the full well capacity by measuring the saturation current? How about the read noise? Thanks a lot.
 
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I'm not sure about everything you ask, but one thing I do know is that in my company full well capacity is calculated using "rule fo thumb methods" based upon the size of the pixel, number of clock phases and average number of electrons per micron squared of your doped substrate (ie. buried channel).
 

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