Fuse current of silicon nanowire

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Discussion Overview

The discussion revolves around determining the current at which a suspended silicon nanowire with a rectangular cross-section will break due to thermal effects. Participants explore the complexities of modeling the thermal behavior of the nanowire, considering factors such as resistance, thermal conductivity, and heat dissipation mechanisms.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • One participant proposes a model to calculate the current based on the heat generated by electrical power and the heat of fusion of silicon, but acknowledges limitations in accounting for heat dissipation.
  • Another participant suggests that experimental validation may be necessary and recommends numerical simulations using software like Comsol or ANSYS, while noting the challenges in obtaining accurate parameters.
  • A later reply emphasizes the importance of understanding the cooling mechanisms of the nanowire and suggests looking into related devices for insights on efficient cooling.
  • One participant expresses concern that their initial current estimate is very low, indicating a desire for an upper limit to avoid damaging the nanowire.

Areas of Agreement / Disagreement

Participants do not reach a consensus on the best approach to determine the breaking current of the nanowire. Multiple competing views exist regarding the necessity of experimental data versus simulation, as well as the complexities involved in accurately modeling thermal conductivity in nanowires.

Contextual Notes

Participants highlight the dependence on various parameters that may not be readily available in the literature, such as boundary resistance and cooling efficiency, which complicate the modeling process.

tresgog
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Hello,

I'm studying for a project a rectangular-cross sectionned suspended silicon nanowire.

My question is very simple: at which current will my nanowire break?

The melting point is 1687K and I start at 300K

I don't really know where to start since the resistance, the thermal conductivity and many physical depend upon the temperature and my temperature range is wide.

I've tried the following:

Provided that the heat of fusion of Silicon is: 50.6kJ.mol-1

I have the heat generated by the electrical power = R*I*I*t
R=electrical resistance
I=current
t=time

I must match the heat generated by the electrical power and heat of fusion

(Heat of fusion)*(Volume*density/molar mass)=R*I*I*t

And I can have my current I

However this model is stupid because I don't take to account the dissipation by convection, conduction and scattering.

how to do it properly?
 
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tresgog said:
how to do it properly?

My guess is that you don't; you will have to perform the experiment.
That said, you might be able to get some qualitative understanding by performing a numerical simulation using Comsol, ANSYS or similar. But even that is tricky because there are so many parameters involved, some of which might be very difficult to find in the literature (e..g the boundary resistance between the nanowire and the substrate).

Note that I assuming here that you can use "classical" thermal conductivity; if the conductivity is quantized (as it can be in nanowires) it becomes even more complicated.

Thermal conductivity in nanowires is a "hot" topic at the moment, and it is far from trivial.
 
Thank you for your answer.

At some point I was thinking to just go ahead and simulate my nanowire and ANSYS.

Before doing so, I would like to have a rough idea of the current I should put in my wire.

The thing is, I have the nanowire, I don't want to break it just right away so I just want to have an upper limit of the current.

The value I found with the above model is very low (in one hour I should only put 62pA)
 
Yes, but the tricky bit here is to figure out how well the nanowire is cooled via conduction to the substrate. There are ways to estimate this using some fairly simple formulas, but these formulas are only useful if you know the numerical values for all relevant parameters; and these need to be determined experimentally...

Try googling (Google scholar) for information about e.g. hot-electron or transition-edge bolometers and similar devices; they all rely on efficient cooling of a mesoscopic device (sometimes fabricated on a suspended substrate) so you should be able to find quite a lot of information about cooling; some of which should be relevant to your case.
 

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