How to calculate Carrier Concentration vs. Depth from a CV measurement?

[Black Nova]

TL;DR Summary

I'm trying to obtain the carrier concentration vs depth profile from the CV (capacitance-voltage) measurements of a normally-on HEMT, but I´'m confused about how to extract the values for depth.

I'm trying to obtain the free carrier concentration vs depth profile from the CV (capacitance-voltage) measurements of a normally-on HEMT with the expressions used for a Schottky barrier, but I´'m confused about how to extract the values for depth. I found in textbooks and articles that the formula W(V) = ε/C(V) can be used:

However, I don't know if using those equations, (16) and (17), is enough or I should make any additional considerations.
Could someone, please help me?

Thanks

 

[Aaron Bex]

Yes, using equations 16 and 17 is enough to extract the free carrier concentration vs depth profile from the CV measurements of a normally-on HEMT. However, it is important to note that these equations assume the depletion region of the Schottky barrier is uniform and that the surface potential is known. If either of these assumptions are not valid, then the extracted profile may be inaccurate. Additionally, the profile may be affected by the presence of surface states or other material effects. It is thus important to ensure that the measured CV data is accurate before attempting to extract the profile.