- #1

Black Nova

- 3

- 0

- TL;DR Summary
- I'm trying to obtain the carrier concentration vs depth profile from the CV (capacitance-voltage) measurements of a normally-on HEMT, but I´'m confused about how to extract the values for depth.

I'm trying to obtain the free carrier concentration vs depth profile from the CV (capacitance-voltage) measurements of a normally-on HEMT with the expressions used for a Schottky barrier, but I´'m confused about how to extract the values for depth. I found in textbooks and articles that the formula W(V) = ε/C(V) can be used:

However, I don't know if using those equations, (16) and (17), is enough or I should make any additional considerations.

Could someone, please help me?

Thanks

However, I don't know if using those equations, (16) and (17), is enough or I should make any additional considerations.

Could someone, please help me?

Thanks

Last edited by a moderator: