How to simplify behavior of a field-effect transistor

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SUMMARY

The discussion focuses on the governing equations for field-effect transistors (FETs), specifically comparing them to bipolar junction transistors (BJTs). Key equations highlighted include the source-to-drain current for FETs represented as ID=ID,max*[1-(VGS/VP)²], with VP being the pinch-off voltage. The transconductance for FETs is defined as g=2*SQRT(ID*ID,max)/|VP|. Participants emphasized the importance of consulting datasheets from manufacturers like On Semiconductor and Texas Instruments for accurate characteristics.

PREREQUISITES
  • Understanding of BJT equations, specifically IC=β×IB and IE=IB+IC.
  • Familiarity with FET types, including MOSFET and JFET.
  • Knowledge of transconductance and its significance in transistor operation.
  • Ability to interpret IV curves and datasheet specifications for FETs.
NEXT STEPS
  • Research the characteristics and equations specific to MOSFETs and JFETs.
  • Learn how to calculate transconductance for different FET configurations.
  • Explore datasheet analysis techniques for semiconductor devices.
  • Study the impact of gate voltage on FET operation and performance.
USEFUL FOR

Electrical engineers, students studying semiconductor physics, and professionals involved in circuit design and analysis will benefit from this discussion.

SupernerdSven
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Are there simple governing equations for FETs like there are for BJTs, and if so, what are they? For example, in the BJT case we have
IC = β×IB
IE + IC + IB

I'm sure it depends on the type - MOSFET, JFET, etc. - so anything anyone could contribute would be helpful. From what I understand, the source-to-drain current is proportional to the gate voltage, so if it's linear it would be something like
IDS = β×VG

From what I've seen Googling IV curves, that's fairly close up until saturation. Am I off base here, or am I on the right track?
 
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SupernerdSven said:
Are there simple governing equations for FETs like there are for BJTs, and if so, what are they? For example, in the BJT case we have
IC = β×IB
IE + IC + IB

I'm sure it depends on the type - MOSFET, JFET, etc. - so anything anyone could contribute would be helpful. From what I understand, the source-to-drain current is proportional to the gate voltage, so if it's linear it would be something like
IDS = β×VG

From what I've seen Googling IV curves, that's fairly close up until saturation. Am I off base here, or am I on the right track?

(a) BJT
The second equation should be: IE=IB+IC.
More than that, for the BJT you forgot the control function IC=Io*[exp(VBE/Vt)-1].
This equation is important because the slope of this function gives the transconductance g=IC/Vt.

(b) FET
Here, the input-output relationship (control function) is ID=ID,max*[1-(VGS/VP)²]
with VP: pinch-off or threshold voltage, respectively.
Again, the transconductance is the slope of this function: g=2*SQRT(ID*ID,max)/|VP| .
 
Or you just look up the characteristics in a data sheet:
IDVGS.jpg
 
the datasheet curve only works at one VDS value, usually they give you multiple curves
 
Thanks, everyone!
Baluncore: Wow, I must have missed that. Thanks for pointing it out!
LvW: Whoops, sorry about the typo. Yes, we only used the linear approximation in the class I took - we didn't need anything finer at the time. I appreciate your contribution!
Svein and donpacino: Thanks for pointing those out! Since I didn't feel that I knew enough about how I could use one, I hadn't looked into the datasheets much, but now I know what to expect.
 
donpacino said:
the datasheet curve only works at one VDS value, usually they give you multiple curves
Yes, but when I tried to copy from a real datasheet it was "protected". So for a real datasheet, search at On Semiconductor or Texas Instruments.
 
Sorry, I have to correct one of my formulas (post 3). The expression in the outer brackets [... ] must be sqared:
correct: ID=ID,max*[1-(VGS/VP)]²
 

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