So far the explanation on BJT working principle always explained in electron flow perspective. I felt it's hard to relate with conventional current direction notation when the explanation explained in electron flow direction notation. For example in NPN transistor, the C-E current flow made me confused because there were depletion layer on collector-base area (especially if we substitute the transistor symbol with two diodes, there should be reverse bias on Collector-Base. But, current still manage to reach Emitter side Ie=Ic+Ib). Also, i feel off when it said transistor act as "amplifier" (amplifying base current). The highest current value in NPN transistor is on Emitter. Meanwhile, the common usage is to put Load Output on collector. Why collector? Why not emitter if the function is to amplify current which has the highest value for current? would it be easier to relate BJT transistors as a water faucet? Please enlighten me on this matter.