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I posted this here because it is for a bit of course work, but I am just looking to confirm if I am using the right equation. I hope this is ok! If not, sorry! I just didn't think since I was asking a specific assignment question, I would post here.

I need to investiage how changing the width and length of a transistor channel effects the threshold voltage. I need to do this in a simulation package and in theory. The simulation is grand, so now I just need to back it up.

I have been given a few parameters, such as a starting threshold voltage, figure for mobability, thickness of oxide. So, would I be correct in using, and rearranging the following equation to see how the V_{t}changes?

I_{d}= β ((V_{g}-V_{t})V_{d}- V_{d}^{2}/2)

Where β = ([itex]\mu[/itex]_{0}W C_{ox}/L)

I have some issues rearrenging equations, but if I know I am on the right path, I can work on it.

Thanks in advance.

Seán

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# Investigating the effects of changing the length and width of transistor channel

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