Metal-Semiconductor-Metal Junction

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SUMMARY

The discussion focuses on metal-semiconductor-metal (M-S-M) junctions, specifically involving a p-type semiconductor positioned between two similar metals. It highlights the formation of Schottky barriers and ohmic contacts in these junctions. The key question raised is whether electrons can tunnel directly between the metals when the semiconductor is only a few nanometers thick and properly biased. Participants confirm that significant tunneling is indeed possible under these conditions, suggesting the potential for using the p-type semiconductor to modulate its depletion width for switching applications.

PREREQUISITES
  • Understanding of metal-semiconductor-metal (M-S-M) junctions
  • Knowledge of Schottky barriers and ohmic contacts
  • Familiarity with quantum tunneling principles
  • Basic concepts of semiconductor biasing and depletion width
NEXT STEPS
  • Research quantum tunneling in semiconductor devices
  • Explore the impact of depletion width modulation in p-type semiconductors
  • Study the design and applications of M-S-M junctions in electronic circuits
  • Investigate experimental setups for measuring tunneling effects in thin semiconductors
USEFUL FOR

Electrical engineers, semiconductor physicists, and researchers working on advanced electronic devices, particularly those interested in tunneling phenomena and junction design.

1msm
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Hello everyone,

Here i have metal-semiconductor-metal (M-S-M) junctions, p-type semiconductor
separating two similar metals.
M-S-M_zps0576103a.jpg

In above picture semiconductor forming schottky barriers with metals, While
in below picture these are ohmic contacts..
M-S-M-1_zps27864332.jpg

If assume that the semiconductor is very thin(few nanometers) and proper biasing
is applied,
Then is it possible for the electrons to tunnel directly from metal to metal..??
Or is there any indirect tunneling paths.?

Any answers would be greatly appreciated!
 
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Out of curiosity is this something you're working on as a personal project?
 
1msm said:
Hello everyone,

Here i have metal-semiconductor-metal (M-S-M) junctions, p-type semiconductor
separating two similar metals.
M-S-M_zps0576103a.jpg

In above picture semiconductor forming schottky barriers with metals, While
in below picture these are ohmic contacts..
M-S-M-1_zps27864332.jpg

If assume that the semiconductor is very thin(few nanometers) and proper biasing
is applied,
Then is it possible for the electrons to tunnel directly from metal to metal..??
Or is there any indirect tunneling paths.?

Any answers would be greatly appreciated!

If the semiconductor is thin enough then absolutely you can get a significant tunneling path. Is the idea to bias the p-type semicondutor to modulate its depletion width and create a switch?
 

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