N-doped region tend to flow to the p-doped region

  • Thread starter Thread starter Harmony
  • Start date Start date
  • Tags Tags
    Flow
Click For Summary
SUMMARY

The discussion centers on the behavior of electrons in n-doped regions of diodes, specifically their tendency to flow to p-doped regions due to the diffusion effect. A depletion region forms until the electric field within it counteracts this diffusion, establishing equilibrium. However, a minimum forward bias voltage of approximately 0.3-0.5 V is necessary to overcome the built-in potential that opposes current flow, allowing the diode to conduct. This understanding clarifies the relationship between diffusion, electric fields, and the required forward bias in diode operation.

PREREQUISITES
  • Understanding of semiconductor physics
  • Knowledge of diode operation principles
  • Familiarity with depletion regions in p-n junctions
  • Basic concepts of forward bias and built-in potential
NEXT STEPS
  • Research the current-voltage characteristics of diodes
  • Study the effects of temperature on diode performance
  • Learn about the role of built-in potential in semiconductor devices
  • Explore the differences between ideal and real diodes
USEFUL FOR

Electrical engineers, semiconductor physicists, and students studying electronics who seek to deepen their understanding of diode behavior and semiconductor junctions.

Harmony
Messages
201
Reaction score
0
When a diode is first manufactured, the electrons in the n-doped region tend to flow to the p-doped region due to diffusion effect. In the process, a depletion region is formed until the electric field in the depletion region cancel out the diffusion effect. Hence an equilibrium is reached. (or so I thought)

However, since this two effect cancel out each other exactly, why would we need a minimum voltage of about 0.3-0.5 V to forward bias it? Wouldn't any voltage cause current to flow, since the diffusion+external voltage source is now greater than the electric field in the depletion zone alone?
 
Engineering news on Phys.org


You're correct in that a depletion region is formed, and that a "built-in" potential across the depletion region results, but incorrect in the ramifications of this. The built-in potential opposes the direction of current flow as it normally occurs when the diode is acting in forward-bias mode.

So you need to overcome the built-in potential (the forward diode voltage) before the diode turns on and current starts flowing:
http://en.wikipedia.org/wiki/Diode#Current.E2.80.93voltage_characteristic
 

Similar threads

Replies
3
Views
2K
  • · Replies 8 ·
Replies
8
Views
17K
  • · Replies 5 ·
Replies
5
Views
4K
  • · Replies 3 ·
Replies
3
Views
2K
Replies
1
Views
2K
Replies
1
Views
1K
  • · Replies 10 ·
Replies
10
Views
3K
Replies
1
Views
3K
Replies
3
Views
2K
Replies
1
Views
2K