N types have on more free electron added to its structure from doping an impurity on it. Such as an arsenic impurity onto a pure intrinsic silicon crystalline structure. However wouldn't it having one more electron inside of it that is bound to the arsenic atom make the ntype more resistant to electron flow from a power source with an emf/voltage/potential difference? I also wonder about the vice versa for the P-type. Wouldn't the P-Type be more conductive unlike the N-Type which i am assuming to be resistive? Mainly because when doping something onto a silicon structure to make it a N-Type a hole is created. Thus allowing electrons to want to take that hole for transportational use.