Optimizing Gate Drive for High Voltage EFT Generator Design

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Discussion Overview

The discussion revolves around the design and optimization of a high voltage EFT (Electrical Fast Transient) generator, specifically focusing on gate drive parameters and circuit performance. Participants are examining circuit components, simulation results, and the implications of various design choices in accordance with IEC61000-4-4 standards.

Discussion Character

  • Technical explanation
  • Debate/contested
  • Mathematical reasoning
  • Experimental/applied

Main Points Raised

  • One participant is unclear about the values of resistors R1 and R5 in their EFT generator design and is not achieving the expected output.
  • Questions are raised about the rate of current rise through the inductor-resistor combination R1-L1 and the duration of the on-time.
  • There is confusion regarding the meaning of "U" and the acronyms TD, TR, and TF, with some participants suggesting "U" stands for micro.
  • Another participant discusses the importance of sufficient current through the inductor to achieve a strong inductive kick when switched off, relating it to concepts in flyback converters and automotive ignition systems.
  • Suggestions are made to experiment with wider pulse widths and shorter fall times in the simulation to observe changes in output.
  • Clarifications about the notation used in SPICE simulations are provided, including the interpretation of different units and their representations.
  • A participant calculates the gate charge required for a MOSFET and suggests increasing the pulse amplitude to improve gate drive voltage.

Areas of Agreement / Disagreement

Participants express various uncertainties and disagreements regarding the circuit parameters, the interpretation of acronyms, and the implications of design choices. No consensus is reached on the optimal values or configurations for the EFT generator.

Contextual Notes

Participants note limitations in the provided circuit design, including missing values for certain components and potential discrepancies in simulation outputs. The discussion reflects a range of assumptions about circuit behavior and component characteristics.

Who May Find This Useful

This discussion may be useful for engineers and hobbyists involved in high voltage circuit design, particularly those interested in EFT generators and SPICE simulation techniques.

Nikhil N
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I am trying to make a EFT generator in low cost which can generate bursts specify by IEC61000-4-4.
The circuit which I am working on is given as below. This is for making a high voltage of atleast 400V. I got this design from a paper. But it is not mentioned the values of R1 and R5. I am not getting the expected out put too. Can anybody tell what mistake I am doing?
high_v.PNG

The Pspice files are given in attachment
 

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What is the rate of current rise through your inductor-resistor combination R1-L1 ?
What is duration of your on-time ?

what is "U" and what are those acronyms TD TR TF et al ?
 
jim hardy said:
What is the rate of current rise through your inductor-resistor combination R1-L1 ?
What is duration of your on-time ?

what is "U" and what are those acronyms TD TR TF et al ?
pulse source.PNG
 
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Thanks !

Still you haven't said what is "U" in the TD, TR, and TF terms. If it's short for "micro" why didn't they use μ like they did for PW and PER ?

I don't know a doggone thing about spice.
If i just assume they're sloppy typers and "U" also means "micro" ,
then every 200 microseconds we apply a 50 microsecond pulse of 12 volts through resistance of 2 ohms plus whatever is R of the mosfet ?
Were the mosfet perfect it'd be zero ohms, so let's assume that for simplicity

Current in a RL circuit is
ind52.gif


so at end of 50 microseconds I = 12/2 X (1-e-2X50E-6 / .002 ) = 6 X (1 - 0.9512) = 293 milliamps (check my arithmetic please)

which seems mighty little for a 5 amp transistor.

From where did your on-time come?
I think but do not know you probably need more current through your inductor so that when switched off it gives a healthy inductive kick.
The energy you add to the output capacitor's electric field must first get built up in the coil's magnetic field, ½LI2 is all that's available to get dumped into the capacitor where some of it (hopefully a lot of it) becomes ½CV2 .
That's how "Flyback" converters work.
We run into that in automobile ignitions. When the points are set too wide, they do not stay closed long enough between cylinder firings at high RPM for the coil current to rise high enough to make a healthy spark for the plugs. That limits how fast the car will go. You'll hear gearheads talking about "Dwell" which is a measure of what fraction of the time points stay open .

Since you're simulating, try 10X wider pulse width 1/10th as often and see what happens. Also shorten up fall time to a few nanoseconds.Wait a second what's this ?

upload_2017-4-13_23-2-14.png


V1 is shown as 12 volts adjacent the battery but 5 volts in the tabulation
and V2 is drawn adjacent a source that looks like a pulse but assigned 0 volts in the tabulation

You and i know what you meant but computers are sooooooo nitpicky... better double check what it's up to.

What does your simulation program do when you lengthen the pulse width and shorten the fall time ?
 
Last edited:
jim hardy said:
Still you haven't said what is "U" in the TD, TR, and TF terms. If it's short for "micro" why didn't they use μ like they did for PW and PER ?
Yah, U is for micro
 
Mosfet is probably another ohm, see
http://www.vishay.com/docs/91070/sihf840.pdf
 
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jim hardy said:
I don't know a doggone thing about spice.
If i just assume they're sloppy typers and "U" also means "micro", …
The user can entered the multiplier in either case. With the old FORTRAN SPICE it was always upper case, but now anything is possible. U and u are both 1e-6. Some spices can replace u with µ if the option is enabled. M and m are both milli = 1e-3, while the three letter MEG, written in any case is 1e+6. A 1uF capacitor will be 1e-6 farads. 1nF is also sensible. But F or f is not always farad. If it comes first, it is femto. So a beginners 1F super capacitor will have almost no capacitance.
 
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Another little experiment, real easy since it's just a computer program

big mosfets take a fair amount of gate charge
from its datasheet at
upload_2017-4-14_9-20-24.png


to squeeze that 63 nanocoulombs through your 470 ohms in 50 microseconds takes how many volts? I get 0.59 , meaning your mosfet gets on;y 4.4 volts of gate drive.

mosfetXferforNikhil.jpg


try raising pulse amplitude to 10 volts?

old jim
 

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