Oxidation in processor manufacturing serves to convert silicon into high-quality silicon oxide, crucial for creating gate insulators in MOSFET transistors used in CMOS technology. This process occurs at high temperatures and is slow, making it suitable for producing thin, smooth oxide layers without defects. While thermal oxidation is effective for early steps, it is limited due to potential damage to metal layers and unwanted crystallization. Other methods, such as chemical vapor deposition (CVD), are employed for additional oxide layers, particularly for insulating adjacent transistors. Understanding these processes is essential for optimizing semiconductor fabrication.