Radiation Hard Electronic Design for LVO Long Mission

[Arend]

TL;DR Summary

For std LEO electronic design, the modern radiation-hard components with a Single Event Latchup (SEL) Immune to LET = 85 MeV-cm2/mg are in a safe condition. What about for a Venus mission?

Venus does not have a magnetosphere, so the Galactic Cosmic Rays (GCRs) environment shall be much worse than in a LEO environment. Looking to the std radiation models for Venus, the standard radiation-hard space level electronic component with tested immunity LET = 85 MeV-cm2/mg seems not enough, so, for example, a 1cm2 Si die will suffer considerable flux above this level during a long mission (10 years for example). So, the question is, usually we are not paying attention to latch-up condition for LEO designs, as using tested immunity LET = 85 MeV-cm2/mg, but for a venus mission (LVO), shall be design be different, including additional protection against Latchup? Thank you!!!

 

[berkeman]

Is this question for schoolwork?