Base-collector current in BJT Saturation

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Discussion Overview

The discussion revolves around the base-collector current in a Bipolar Junction Transistor (BJT) when operating in saturation mode. Participants seek to clarify the relationships and formulas relevant to this specific operational state, contrasting it with the forward active mode.

Discussion Character

  • Exploratory, Technical explanation, Debate/contested

Main Points Raised

  • One participant expresses difficulty in finding a formula for the base-collector current in saturation mode, noting that most references focus on the forward active mode.
  • Another participant suggests that a large base current indicates forward operation of the base-collector junction, mentioning a rule of thumb that a base current around 1/10 of the collector current is a good indication of this state.
  • A different participant reiterates the search for a formula specific to saturation mode, emphasizing the need for clarity on this aspect.
  • One participant explains that in saturation, the base-collector junction is forward biased, and while the forward biased diode equation applies, the transistor does not operate in the conventional sense due to the voltage polarities.
  • This participant also notes that the collector current is typically determined by external circuit elements rather than transistor action in saturation.

Areas of Agreement / Disagreement

Participants do not reach a consensus on the existence of a specific formula for the base-collector current in saturation mode, and there are differing views on the operational characteristics of the BJT in this state.

Contextual Notes

Some assumptions about the operational characteristics of BJTs in saturation mode remain unresolved, particularly regarding the influence of external circuit elements on collector current.

Helena Wells
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TL;DR
This thread is about the base-collector current in BJT saturation
I can't find the formula for the current flowing from the base to the collector in saturation mode of BJT.Any help?There are many references to the emitter current in the forward active mode but none for the base-collector current in saturation mode.Help appreciated.
 
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You are looking for a formula?
The other way round: A pretty large base current is an indication for forward operation of the base-collector junction. It is common practice to say (for example) that a base current which is app. 1/10 of the collector current is a good and safe indication for a forward biased B_C junction. But this is a "rulre of thumb" only - a factor of 0.05 is also good enough.
 
yeah just write there is a formula for the relationship between collector , emitter current and base current in forward active mode i was wondering if there is for saturation.
 
Helena Wells said:
yeah just write there is a formula for the relationship between collector , emitter current and base current in forward active mode i was wondering if there is for saturation.
It is just the forward biased diode equation. The BC junction is forward biased in saturation and there can't be any "transistor" action because the voltage polarities aren't right. The device is completely flooded with carriers flowing through both the BE and BC junctions.

You can find some of the equations here: http://web.mit.edu/6.012/www/SP07-L18.pdf

edit: Removed some of the words, which aren't correct. The device is still a transistor, βf & βr still matter. But in normal application circuits it isn't working like a transistor, the collector current is normally determined by eternal things (resistors and voltages).
 
Last edited:
Ah ok thanks Dave!
 

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