Hello. I've known that saturation current occurs when VCE is less than VBE, which means, the base-emitter is forward-biased and so it is for collector-base. For NPN transistor, electrons from emitter (majority carrier of emitter) is able to go up to only base, no further travels into emitter. The electrons from collector (also majority carrier of collector) can go only up to base. So, all currents from both ends of the transistor finally arrives at the base and it should go through base terminal. It means base current is the most strong than emitter and collector current? I've always though base current is weakest one. Where am I wrong?