Semiconductor temperature

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SUMMARY

The discussion focuses on the temperature dependence of conduction electrons in n-doped semiconductors compared to intrinsic semiconductors. It establishes that at low temperatures, carriers are frozen out, rendering the material an insulator. As temperature increases, all donor states become ionized, leading to a temperature-independent electron concentration. At sufficiently high temperatures, intrinsic carrier concentration surpasses donor concentration, resulting in behavior akin to intrinsic semiconductors.

PREREQUISITES
  • Understanding of n-doped and intrinsic semiconductors
  • Knowledge of temperature effects on semiconductor physics
  • Familiarity with ionization energy and energy gap concepts
  • Basic principles of electron and hole concentration
NEXT STEPS
  • Read John McKelvey's "Solid State and Semiconductor Physics" for in-depth analysis
  • Study the temperature dependence of intrinsic carrier concentration in semiconductors
  • Explore the behavior of vacuum diodes and their heat-dependent transfer characteristics
  • Investigate the differences between n-doped and intrinsic semiconductor diodes
USEFUL FOR

Students and professionals in materials science, electrical engineering, and semiconductor physics who seek to understand the impact of temperature on semiconductor behavior.

demLara
Hello
I have got a question and i don't know the answer. Please help me.
I have a n doped semiconductor. How does the number of conduction electrons depends on temperature and compare the situation to an intrinsic semiconductor?
Do i look at the intrinsic density, because when it is n doped than n is much bigger than p and the multiplication will be dominated by n. Then i would know the temperature dependence for intrinsic T^3/2 *exp ?
Thanks in advance
 
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The answer is rather long. I'd suggest reading John McKelvey's "Solid State and Semiconductor Physics". He fully develops how electron and hole concentration vary with temperature.
 
Try to read about vacuum diode, it uses heat depend transfer. Look also at semiconductor diode to have more reliable info.
 
I can offer you a short answer.
There are three temperature regions. At very low temperatures, that is, kBT <is less than ionization energy of the donor state, the carriers are frozen out - number of electrons in the conduction band is vary small and the material is essentially an insulator. This occurs at cryogenic temperatures.
The second region is when the kBT is larger than ionization energy of the donor states but much less than energy gap. In this region, all the donor states are ionized and the number of electrons is essentially independent of the temperature.
The third regions is when the temperature is large enough so that the intrinsic carrier concentration becomes equal or greater than the concentration of donors.
In that region, the semiconductor is pretty much intrinsic with the same number of electrons and holes.
 

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