Si -> Silicidation, Ge -> Germanidation, III-V (i.e. GaAs) -> ??? hi, i'm new in this forums and not sure whether to post this under electrical engineering or chemical engineering, since it's a material based question regarding an electron device. Here goes: For Si MOS devices utilising a schottky source/drain, the metal, i.e. Pt, is e-beam evaporated on the Si surface and later silicided to form a schottky contact of PtSi/Si. If i were to replace the Si with a III-V compound, for example GaAs, what would be the "silicidation" process be called, and what compound will the metal form with the III-V compound? Thanks!