(adsbygoogle = window.adsbygoogle || []).push({}); 1. The problem statement, all variables and given/known data

A 50mm wafer, 2mm thick is implanted with Boron at 100keV and 1mA. Considering only conductive cooling, given that thermal resistance is 10K/W, to room temperature of 25oC, determine the steady state wafer temperature and also the time constant for heating

2. Relevant equations

I know that Net Q = CdT/dt = Qin - ( T - To) / thermal resistance.

3. The attempt at a solution

I can determine Qin by using 1ev = 1.602 X 10^-19 J. But I am stuck on how to proceed. Could someone please help?

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# Steady state temperature of wafers?

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