1. The problem statement, all variables and given/known data A 50mm wafer, 2mm thick is implanted with Boron at 100keV and 1mA. Considering only conductive cooling, given that thermal resistance is 10K/W, to room temperature of 25oC, determine the steady state wafer temperature and also the time constant for heating 2. Relevant equations I know that Net Q = CdT/dt = Qin - ( T - To) / thermal resistance. 3. The attempt at a solution I can determine Qin by using 1ev = 1.602 X 10^-19 J. But I am stuck on how to proceed. Could someone please help?