Strong static magnetic field influences on IC

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Discussion Overview

The discussion focuses on the influence of strong static magnetic fields (7 to 12 Tesla) on bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), exploring both theoretical and experimental aspects. Participants express interest in understanding how these fields affect transistor parameters, amplifiers, and mixers, as well as the implications for magnetic components within these devices.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant seeks papers or materials on the effects of strong static magnetic fields on BJTs and MOSFETs, noting significant changes in transistor parameters with varying azimuth angles due to the Hall effect.
  • Another participant provides links to several papers discussing related effects in semiconductors, highlighting the challenge of accessing this information due to paywalls.
  • A different participant mentions that magnetic components in devices, such as inductors and transformers, will also be affected by strong magnetic fields, potentially leading to saturation and device malfunction.
  • One participant expresses skepticism about placing ferromagnetic cores in such strong fields, indicating that the effects of magnetic fields can vary based on direction and transistor design.

Areas of Agreement / Disagreement

Participants do not reach a consensus; there are multiple competing views regarding the effects of strong magnetic fields on transistors and related components, as well as differing opinions on the practicality of using such fields in device design.

Contextual Notes

The discussion highlights limitations in available research and the dependency on specific conditions such as magnetic field direction and device design, which remain unresolved.

Who May Find This Useful

This discussion may be of interest to researchers and engineers working in semiconductor physics, electrical engineering, and materials science, particularly those exploring the effects of magnetic fields on electronic components.

tendo
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Does anyone have any papers or materials on how strong static magnetic field (7 to 12 Tesla) influence BJT and MOSFETS?
I didn't find many people doing research on this. All I find is some experiment results. It seems transistor parameters change a lot with different azimuth angle due to Hall effect.
I really would like to know more about how it influences amplifiers and mixers.
Thank you.
 
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Hi there
welcome to PF :smile:

There's lots of papers online eg
"Magnetothermal effect in semiconductors in strong magnetic fields"
http://www.sciencedirect.com/science/article/pii/0022369776901773

The effect of a strong magnetic field on the impurity photoionization in semiconductors
http://onlinelibrary.wiley.com/doi/10.1002/pssb.2221970118/citedby

The effect of stress and strong magnetic fields on the shallow impurities in semiconductors and the piezoresistance and magnetoresistance for hopping conduction
http://www.researchgate.net/publication/249049827_The_effect_of_stress_and_strong_magnetic_fields_on_the_shallow_impurities_in_semiconductors_and_the_piezoresistance_and_magnetoresistance_for_hopping_conduction

unfortunately that and most others are behind pay per view/membership sites
so plenty of info out there, its just a matter of getting access to it :)

Dave
 
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tendo said:
Does anyone have any papers or materials on how strong static magnetic field (7 to 12 Tesla) influence BJT and MOSFETS?
I didn't find many people doing research on this. All I find is some experiment results. It seems transistor parameters change a lot with different azimuth angle due to Hall effect.
I really would like to know more about how it influences amplifiers and mixers.
Thank you.

Welcome to the PF.

In addition to the effects on the semiconductors, the magnetic components in those devices you mention (inductors, transformers, etc.) will be affected too. Those field levels will likely saturate all magnetic components on the device, which will probably keep the devices from working.
 
Putting things with ferromagnetic cores in such a strong field sounds like a stupid idea anyway.

Unfortunately, influences of magnetic fields depend on the magnetic field direction and transistor design.
 

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