The thermal conductivity of boron-doped silicon substrates is only weakly influenced by doping levels, with typical values for single crystal silicon ranging from 149 to 157 W/m-K at room temperature. Specifically, for boron concentrations of 8e18 cm-3 and 1.2e15 cm-3, the variation in thermal conductivity due to doping is minimal, estimated at less than 1 W/m-K. Calculations suggest a thermal conductivity value of approximately 147 W/m-K at 22°C, reinforcing the notion that electronic thermal conductivity is significantly lower than lattice thermal conductivity in silicon at these temperatures. Measurements may not be necessary for practical applications, as the impact of boron doping on thermal conductivity is negligible.
