I am having great trouble in understanding the operation of transistor in saturation region. This is how I understand the working of a transistor: In a bipolar junction transistor the width of base is very small therefore very small number of carrier undergo recombination inside base, whereas, the rest of carriers get conducted through collector because of the polarity of voltage applied across collector-base junction. In this case, electrons flow towards collector because collector is at higher potential than the base. However, when the transistor is being operated in saturation region collector-base junction is forward biased i.e. collector is at lower potential than the base and if this is the case how do the electron flow towards the collector??????? Please help me understand this concept as I am experiencing great frustration not being able to understand it.