- #1
Urmi Roy
- 753
- 1
I've been doing transistor operation in college and I've got pretty confused in some places...please see if you can help me out...
1. The collector-emitter leakage current flows only in the common emitter configuration,when the base current is zero.
Could anyone please tell me why the collector-emitter leakage current flows in the first place and why the base current has to be zero.
Also,why does it flow only in the common emitter configuration?
2. The collector-base leakage current seems to be analogous to collector-emitter leakage current for CB configuration...but it says in my book that only the collector-base leakage current is temperature dependant,not the collector-emitter leakage current ...why?
3.Due to the early-effect,the base width decreases...why does the emitter current increase due to this early effect?(I understad how the early effect increases the collector current,but it is not clear why Emitter current increases.)
(Also,I suppose the increase of emitter current with the early effect is valid for CB and CE configurations.)
1. The collector-emitter leakage current flows only in the common emitter configuration,when the base current is zero.
Could anyone please tell me why the collector-emitter leakage current flows in the first place and why the base current has to be zero.
Also,why does it flow only in the common emitter configuration?
2. The collector-base leakage current seems to be analogous to collector-emitter leakage current for CB configuration...but it says in my book that only the collector-base leakage current is temperature dependant,not the collector-emitter leakage current ...why?
3.Due to the early-effect,the base width decreases...why does the emitter current increase due to this early effect?(I understad how the early effect increases the collector current,but it is not clear why Emitter current increases.)
(Also,I suppose the increase of emitter current with the early effect is valid for CB and CE configurations.)