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Tunnel field-effect transistors

  1. Jan 21, 2013 #1
    Hi All,

    I've been reading about tunnel field-effect transistors (TFET) as a potential design to impact post-CMOS technologies, however I'm having a hard time understanding the idea and also some of the terminology. For example, what is a p-i-n TFET? I understand that one side has to be p-doped, the other side is n-doped and the middle is an insulator, but how does changing the gate voltage induce an on/off state? The gate is over an insulator, which means the Fermi level should not change. And why is there a need for two gates? I've also read that MOFETs have thermionic current while TFETs use tunneling current - what's the difference between the two?

    Thanks in advance for all the help!
  2. jcsd
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