Unveiling the Math Behind Potential Well Boundaries

In summary, physicists typically write potential well boundaries using equally greater and smaller than signs, but they only require the derivative to be continuous at the discontinuity. There is no potential barrier at the discontinuity, so one can approximate the limit as accurately as desired.
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DrinkanDerive
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Confused about boundaries
Hello there. I want to understand the mathematical idea behind boundaries that we write for a potential well. Why we use equally greater and smaller than let's say x between -4a and -2a but we only write x is less than -4a ? How to approach this idea with convergence theorem or Hilbert space? Thank you all and please be safe.
 
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Hello DD, :welcome: !

DrinkanDerive said:
the mathematical idea
No different than when studying functions.
E.g. ##\tan(x)## exists for all ##x## in ## -{\pi\over 2} < x < {\pi\over 2}## but not for all ##x## in ## -{\pi\over 2} < x \le {\pi\over 2}##

QM potential well is two discontinuities that have to be treated separately. Usually we require the wave function and its derivative to be continuous, but at the discontinuity the second derivative is discontinuous.

Physicists are notoriously casual with such things, because they are idealizations of continuous phenomena.

We also don't bother to assign a potential value at the discontinuities themselves: the outcome of the analysis doesn't change.

Disclaimer: I'm an experimental physicist -- perhaps a theoretician or a mathematician can improve :cool: or even correct :nb) my reply.
 
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The problem with a finite depth potential well has the "particle in box" system as its limit when the well depth increases without bound. So you can approximate it as accurately as you want without discontinuity even in the first derivative of ##\psi##, by constructing a finite potential well and setting some large number as the depth.
 
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A beam comes from - \infty to 0 and we have u(x) = e^(kx) + R e^(-kx) ; x<0. Why we omit the potential barrier when it comes to write the boundary. After the first term reaches in the box or well we write 0\geq x \leq 2a. When we take the limit when x goes to infinity shouldn't we omit the e^(kx) term? If we say x \leq 0 can't we write u_{1} |_{x=0} = u_{2}|_{x=0} ? Thank you for the answers! :)
 

1. What is a potential well boundary?

A potential well boundary is a mathematical concept used to describe the behavior of particles or systems in a potential energy field. It refers to the points at which the potential energy of a particle or system reaches a minimum value, creating a "well" that the particle or system can be trapped in.

2. How is the potential well boundary calculated?

The potential well boundary is calculated using the Schrödinger equation, which is a fundamental equation in quantum mechanics that describes the behavior of particles in a potential energy field. The boundary is determined by solving the Schrödinger equation for the potential energy function of the system.

3. What factors affect the potential well boundary?

The potential well boundary is affected by several factors, including the shape and depth of the potential energy well, the mass and energy of the particle or system, and any external forces acting on the particle or system. Changes in these factors can result in shifts in the location or size of the potential well boundary.

4. What is the significance of the potential well boundary in physics?

The potential well boundary is a crucial concept in understanding the behavior of particles and systems in quantum mechanics. It can help predict the behavior of particles in various physical systems, such as atoms, molecules, and solid materials. The potential well boundary also plays a role in understanding phenomena such as energy levels, bonding, and stability.

5. Are there real-life applications of potential well boundaries?

Yes, potential well boundaries have many real-life applications in fields such as chemistry, materials science, and electronics. For example, the concept of potential well boundaries is used to explain the behavior of electrons in semiconductors, which is essential in the development of electronic devices. It is also used in the study of chemical reactions and the properties of materials at the atomic level.

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