A What Happens When Semiconductor Intrinsic Carrier Density Exceeds 10^15 cm^-3?

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Is there a rule of thumb that once a semiconductor's intrinsic carrier density reaches 10^15 cm^-3, that the semiconductor cannot effectively be used to perform useful operations?
Is there a rule of thumb that once a semiconductor's intrinsic carrier density reaches 10^15 cm^-3, that the semiconductor cannot effectively be used to perform useful operations?
 
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ZeroFunGame said:
Summary: Is there a rule of thumb that once a semiconductor's intrinsic carrier density reaches 10^15 cm^-3, that the semiconductor cannot effectively be used to perform useful operations?

Is there a rule of thumb that once a semiconductor's intrinsic carrier density reaches 10^15 cm^-3, that the semiconductor cannot effectively be used to perform useful operations?
Never heard of such rule. Germanium intrinsic concentration is 2*10^13 cm^-3, and nowadays even this value is considered too high for applications.
 
trurle said:
Never heard of such rule. Germanium intrinsic concentration is 2*10^13 cm^-3, and nowadays even this value is considered too high for applications.

is the 2*10^13 cm^-3 number empirical? or is there a theoretical proof that could be stepped through to determine this value?
 
ZeroFunGame said:
is the 2*10^13 cm^-3 number empirical? or is there a theoretical proof that could be stepped through to determine this value?
Empirical.
 
link?
 
it's not clear where the reference discusses how the intrinsic mobility is considered too high for applications?
 
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