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Why is resistivity inversely proportional to resistance for NTC semiconductors?
I Why is resistivity inversely proportional to resistance for NTC semiconductors?
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Resistivity is inversely proportional to resistance in NTC (Negative Temperature Coefficient) semiconductors due to their temperature-dependent conduction properties. As temperature increases, the charge carriers in NTC materials become more mobile, leading to lower resistivity and, consequently, lower resistance. This relationship is critical for applications in temperature sensing and circuit protection. The discussion highlights the importance of understanding these properties in the context of thermistors and their conduction models. Overall, the inverse relationship plays a significant role in the functionality of NTC semiconductors.
I am looking at pressure in liquids and I am testing my idea.
The vertical tube is 100m, the contraption is filled with water. The vertical tube is very thin(maybe 1mm^2 cross section). The area of the base is ~100m^2. Will he top half be launched in the air if suddenly it cracked?- assuming its light enough.
I want to test my idea that if I had a thin long ruber tube that I lifted up, then the pressure at "red lines" will be high and that the $force = pressure * area$ would be massive...
I feel it should be solvable we just need to find a perfect pattern, and there will be a general pattern since the forces acting are based on a single function, so..... you can't actually say it is unsolvable right? Cause imaging 3 bodies actually existed somwhere in this universe then nature isn't gonna wait till we predict it! And yea I have checked in many places that tiny changes cause large changes so it becomes chaos........ but still I just can't accept that it is impossible to solve...
Hello! I am generating electrons from a 3D gaussian source. The electrons all have the same energy, but the direction is isotropic. The electron source is in between 2 plates that act as a capacitor, and one of them acts as a time of flight (tof) detector. I know the voltage on the plates very well, and I want to extract the center of the gaussian distribution (in one direction only), by measuring the tof of many electrons. So the uncertainty on the position is given by the tof uncertainty...
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