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Aerozeppelin
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Homework Statement
If a sample of pure silicon at 300 Kelvin has a resistivity of 950Ωm, and if the electron-to-hole mobility ration is 3:1, with the electron mobility equal to 0.12m2V-1s-1, what are the intrinsic hole and electron concentrations?
Homework Equations
I know resistivity is equal to
[itex]\frac{ρL}{A}[/itex]. But I don't think this is applicable. I cannot find any equations in books or on the internet connecting these properties (concentration, mobility and resistivity).
The Attempt at a Solution
Well considering the ratio of electron to hole mobility is 3:1, I presume that the hole mobility is 0.04m2V-1s-1 (ie. electron mobility divided by 3). After that, I'm completely lost!
Any help would be appriciated!