# A doubt regarding saturation mode of BJT

Hi all,
I have a doubt regarding saturation mode of BJT. Saturation occurs when both emitter-base junction and base-collector junction gets forward biased. For forward biasing a silicon p-n junction only 0.7V is needed. So is for emitter-base junction. But not for base-collector junction. Because we know at saturation voltage across collector and emitter Vce is 0.2V. Using Kirchoff's voltage laws the voltage at base-collector p-n junction is less than 0.7V. Why is it lesser?

-Devanand T

0.7V is only an approximation.The more exact equation is:

$$V_{BE}=V_T\; \ln [\frac {I_c}{I_s}]$$

The Vbc diode obey the same equation. Actually I am working with transistors of Ic at 50uA range and the measured Vbe is about 0.5V!!!

Last edited:
NascentOxygen
Staff Emeritus