Atomic gas and Semiconductor Lasers.

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Discussion Overview

The discussion centers on the quantitative differences between light produced by atomic gas lasers and semiconductor lasers, exploring aspects such as power output, efficiency, emission wavelengths, and beam quality. It includes technical comparisons and personal experiences with different laser types.

Discussion Character

  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant notes that atomic gas lasers are low power but high in collimation, while semiconductor lasers have higher power due to stimulated emission.
  • Another participant counters that gas lasers, such as CO2 lasers, can achieve output powers around 20 kW, whereas single emitter semiconductor lasers typically range from mW to W, although stacks can increase overall power.
  • A participant mentions that semiconductor lasers can be much more efficient due to direct band gap materials, claiming their efficiency can be at least 100 times better than that of gas lasers, but they have limitations on power handling due to potential breakdown of the PN junction.
  • It is pointed out that laser diodes are compact and efficient but limited in the wavelengths they can emit directly, while gas lasers are described as heavy, bulky, and inefficient, requiring significant power for relatively low light output.
  • A specific example is given of an Ar/Kr ion laser consuming ~2000 W to produce ~200 mW of light, illustrating the inefficiency and the broad spectrum of emissions it can produce compared to semiconductor lasers.

Areas of Agreement / Disagreement

Participants express differing views on the power capabilities and efficiencies of gas versus semiconductor lasers, indicating that multiple competing perspectives remain without a consensus on the overall advantages of each type.

Contextual Notes

Participants reference specific examples and personal experiences with different laser types, which may introduce variability in the discussion. The efficiency claims and power handling limitations are not universally agreed upon and depend on specific conditions and definitions.

hhhmortal
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Hi, I want to know what the important quantitative differences between the light produced by an atomic gas laser and that produced by a semiconductor laser are?

I know that produced my atomic gas lasers are low power but high collimation, but semiconductor lasers seem to have higher power? because of stimulated emission?


Thanks.
 
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As far as i know its quite the opposite:
You can have gas lasers, for example CO2-lasers with 20 kW output power, and by contrast semiconductor lasers (single emitter) in the mW to W range. Laserdiode stacks of course allow you to increase your overall power since its combined from individual single emitters.

For the difference in the light, the emission wavelength is different and as far as i know the quality of the laserbeam is higher with gas lasers.
 
semiconductor lasers can be much more efficient because of direct band gap materials. From memory the efficiency of semoconductor lasers is at least 100x better than gas lasers...but the downside of it is it can not handle too high power..or the PN junction will breakdown..
 
Laser diodes are very small, very compact and very efficient.

However, they're relatively limited in the wavelengths that they can directly emit (excluding things like diode-pumped YAG to indirectly create other wavelengths) - IR, red, and more recently violet and blue are the only wavelengths possible straight off the diode.

Gas lasers are quite heavy, bulky, fragile and inefficient - requiring large, bulky power supply electronics and cooling.

For example, the Ar/Kr ion laser I have here consumes ~2000 W of electrical power to generate ~200 mW of light, so it's really just a 1999.8 W electric room heater.

However, it generates a range of different red, yellow, green and blue emissions lines right across the spectrum - the beam that comes out is actually white light. Laser diodes can't do that :)
 

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