Choosing Resistors for Diode AND and OR Gates

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Discussion Overview

The discussion revolves around the behavior of diodes in AND and OR gate configurations, specifically focusing on voltage drops across diodes and resistors in these circuits. Participants explore concepts related to forward and reverse bias, breakdown voltage, and the implications of using the constant-voltage-drop model for diodes.

Discussion Character

  • Technical explanation
  • Conceptual clarification
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • One participant questions the significant voltage drop across the D1 diode compared to D2, seeking clarification on the underlying reasons.
  • Another participant notes the output voltage of 0.6V and expresses confusion about how this value was determined.
  • It is mentioned that one diode is in forward bias while the other is in reverse bias, prompting a question about what limits the reverse bias voltage across a diode.
  • A participant reflects on the implications of the constant-voltage-drop model for diodes, suggesting that the voltage drop across the resistor would also be constant if the diode's voltage drop is constant.
  • Discussion includes a mention of breakdown voltage, with one participant seeking to clarify its definition and relevance.
  • Another participant proposes a scenario where both inputs are 5V, questioning the output voltage and the appropriate resistor values for AND and OR gates.

Areas of Agreement / Disagreement

Participants express various viewpoints regarding the behavior of diodes and the implications of the constant-voltage-drop model. There is no consensus on the specific effects of resistor values in AND versus OR gate configurations, and some questions remain unresolved.

Contextual Notes

Participants acknowledge limitations in their understanding of reverse bias voltage and breakdown voltage, indicating that further clarification may be needed. The discussion also highlights the dependency of the constant-voltage-drop model on specific current ranges.

dobry_den
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Hi! There's a schema of a diode AND gate attached. Could anyone of you, please, explain me why the voltage drop across the D1 diode is so big compared to the voltage drop across the D2 diode? Thanks a lot in advance!
 

Attachments

  • AND Gate.GIF
    AND Gate.GIF
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It says that the output voltage (=voltage at the black node) is 0.6V, but I can't really see how they came to this result...
 
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One diode is in forward bias, and the other is in reverse bias. What limits the reverse bias voltage that you can put across a diode, BTW?
 
Oh I see, so the diode with 4.4V voltage drop is reverse biased then...? shame on me for not noticing that... And btw, when using the constant-voltage-drop model for a diode, does it also mean that the voltage drop across the resistor is also constant since it is connected with the diode in a series..? and to your question - i think i don't know what limits the reverse bias voltage across a diode.
 
dobry_den said:
Oh I see, so the diode with 4.4V voltage drop is reverse biased then...? shame on me for not noticing that... And btw, when using the constant-voltage-drop model for a diode, does it also mean that the voltage drop across the resistor is also constant since it is connected with the diode in a series..? and to your question - i think i don't know what limits the reverse bias voltage across a diode.

Yup, the 4.4V is reversed biased. In most cases the, the voltage drop across the resistor would be constant because of a constant current in the circuit. Temperature would have some effects, but usually very little.

Have you ever heard of breakdown voltage?
 
I meant the following..: assume A=1 (i.e. 5V) and B=0 (i.e. 0V). when the voltage drop across the diode is constant (say e.g. 0.6V), then - according to Kirchhoff's Voltage Law - the voltage drop across the resistor has to be constant as well (4.4V in this case), independently of its resistance. The current will change with the change of resistance (I = U/R), but the voltage drop (U) will remain the same*. Is this reasoning correct?

* The resistance will of course have to remain in a certain interval, since the constant-voltage-drop model of a diode is restricted to a certain interval of current magnitudes (like 1mA to 10mA).
 
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Hope I understand the notion of breakdown voltage correctly - it is the minimal voltage drop across a reverse biased diode that makes the diode conduct.
 
And one more question - if both inputs are 5V, then D1 and D2 diodes are reverse biased and the output is equal to (5V - voltage_drop_across_the_resistor) instead of 5V, isn't it?

So when creating these diode gates, should I use resistors with low resistance in case of an AND gate and high resistance in case of an OR gate?
 

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