Common collector vs Common drain amplifier

AI Thread Summary
The discussion highlights the advantages of common collector (CC) and common drain (CD) amplifiers, noting that CC is preferable for BJT transistors while CD is suited for FETs. Both configurations offer slightly less than unity gain and low output impedance, making them effective as buffer amplifiers. However, FETs face challenges at low voltages due to their higher threshold voltage, making BJTs more efficient in such scenarios. The complexity of biasing in CD configurations is also discussed, emphasizing the need for careful resistor selection. Ultimately, the choice between CC and CD amplifiers depends on the specific application and voltage levels involved.
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I was wondering what's the main advantage of choosing one over the other, besides common drain having to suffer body effect. How do we determine if a CC is better or a CD is better to use as a buffer?
 
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You would use a common drain amplifier if you were using a FET. If you had a BJT transistor, you would use a common collector circuit.

Both have slightly less than unity gain (gain < 1 ) and low output impedance, so they are used as buffer amplifiers.
Common collector:
130px-NPN_emitter_follower.svg.png

Common drain:
180px-N-channel_JFET_source_follower.svg.png
 
The main operational difference (at least in my mind) is that FET's are Voltage controlled devices, whereas BJT's are current controlled devices.
 
With Vcc=5 volts, BJTs (common collector) work much better than NMOSs (common drain).
Bob S
 
The threshold of a FET is several volts, but only 0.65V for a bjt. If the input is 10V, the FET will output around 7V, where as the bjt will output 9.35V. For low voltages, the FET threshold is a problem. As Bob. S, stated, when the voltage is LOW, the bjt is a better choice since it drops much less voltage.

Claude
 
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The threshold of a FET is several volts,
You wouldn't use an enhancement mode FET as a common drain amplifier. They do have a large threshold voltage.
Something like an MPF102 actually requires a negative voltage on the gate (relative to the source) to bias it.
This makes the biassing a little more complex as a large source resistor may be needed for the load but a smaller one may be needed for the biassing. So, such circuits often have both.
They have a small bypassed source resistor for bias purposes and a larger unbypassed one for the load. A gate resistor takes the voltage between the two to the gate.

However FETs perform badly at low voltages as Bob S has pointed out.
The high input impedance of an emitter follower is surprising if you haven't seen it before and it certainly becomes a voltage driven device.

If the supply voltage is 10 volts or so, which one you use doesn't make much difference to the performance.
 
vk6kro said:
[Something like an MPF102 actually requires a negative voltage on the gate (relative to the source) to bias it.
This makes the biassing a little more complex as a large source resistor may be needed for the load but a smaller one may be needed for the biassing. So, such circuits often have both.
They have a small bypassed source resistor for bias purposes and a larger unbypassed one for the load. A gate resistor takes the voltage between the two to the gate.
.
Finally getting back to the "good ol' days" of the familiar cathode bias circuits.

Bob S
 
Thanks everyone for the input!
 
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