kthouz
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Hello everybody!
I was studying stuff about transistor and i got stuck somewhere. In lecture they said that The common emitter is the more likely configuration used to amplify signals because it produces more power than other configurations. But when i tried to understand it clearly if found that in a common emitter configuration the input base current Ib is multiplied by \beta (the current gain factor) to give an output collector current Ic=\betaIb while as far as common collector configuration concerned, the input base current is multiplied by (1+\beta) giving an output emitter current Ie=(1+\beta)Ib. As we know the power is directly dependent on the current (P=UI), so i can conclude saying that the power due to a common collector configuration is higher than the one due to a common emitter configuration since the Ie=(1+\beta)Ib\geqc=\betaIb . Am I right?
I was studying stuff about transistor and i got stuck somewhere. In lecture they said that The common emitter is the more likely configuration used to amplify signals because it produces more power than other configurations. But when i tried to understand it clearly if found that in a common emitter configuration the input base current Ib is multiplied by \beta (the current gain factor) to give an output collector current Ic=\betaIb while as far as common collector configuration concerned, the input base current is multiplied by (1+\beta) giving an output emitter current Ie=(1+\beta)Ib. As we know the power is directly dependent on the current (P=UI), so i can conclude saying that the power due to a common collector configuration is higher than the one due to a common emitter configuration since the Ie=(1+\beta)Ib\geqc=\betaIb . Am I right?