Choosing wafers with the same Miller indices is crucial for optimal lattice matching, as different lattice structures can significantly affect transistor properties. The interaction between wafers is important when integrating multiple types, such as n-type and p-type, to form junctions like NPN. The proposed method involves cutting small squares from n-type and p-type wafers, attaching them to create a junction, and then processing them to form an oxide layer and etch for source and drain. Concerns are raised about the feasibility of this approach and whether it has been successfully implemented in practice. The discussion highlights the complexities of wafer integration in transistor design.