Field and Wave Electromagenetics by David K. Cheng (1985).
Boundary Conditions at Conductor / Free Space Interface
[tex]E = \frac{\rho_{s}}{\epsilon_{0}}[/tex]
"The normal component of the E field at a conductor-free space boundary is equal to the surface charge density (rho) on the conductor divided by the permitivity of free space."
Finding the E field at a point P located at radius R from a differential surface element ds is calculated by taking a surface integral (double integral notation not shown):
[tex]E = \frac{1}{4\pi\epsilon_{0}}\int \textbf{a}_{R}\frac{\rho_{s}}{R^{2}}ds[/tex]
where this should converge to the boundary condition specified above at R = 0, but I'm not up to date on my double integral techniques and it appears to me that E might blow up to infinity as R approaches zero in the integral evaluation?
In any case E should decrease with an increase of R away from the conductor surface.
Also see Gauss's law in reference to this thread, where the flux of the normal E field is constant for any surface enclosing a charge, thus as the radius to the surface increases, the normal flux density decreases. For a symmetrical problem the E field lines are easily visualized as being farther apart as the radius increases of the enclosing surface.