Electron and hole concentrations

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The discussion focuses on the correct formulas for calculating electron and hole concentrations in semiconductors, specifically n and p, in relation to the Fermi level position and temperature. The provided equations are n = N{c}exp[-(E{c}-E{f}) / kT] for electrons and p = N{v}exp[-(E{f}-E{v}) / kT] for holes. Clarifications are made regarding the definitions of E{c} and E{v} as the energy levels of the conduction and valence bands, respectively. Additionally, a distinction is noted that n represents concentration rather than number. The conversation concludes with appreciation for the assistance provided.
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Are the following formulas the correct solution to this question? Thanks in advance for any help!

Homework Statement



Write down equations for the electron and hole concentrations n and p in a semiconductor, in terms of N{c} or N{p}, the Fermi level position E{f} and the temperature, T.

Homework Equations


The Attempt at a Solution



n= N{c}exp[-(E{c}-E{f}) / kT]

n=electron
N{c}=Number of energy levels, conduction
E{c}=Energy levels, conduction
E{f}=Fermi energy levels
k=Boltzmann's constant
T=Temperaturep= N{v}exp[-(E{f}-E{v}) / kT]

p=holes
N{v}=Number of energy levels, valence
E{v}=Energy levels, valence
E{f}=Fermi energy levels
k=Boltzmann's constant
T=Temperature
 
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Looks fine to me, although I would have said E_c is the energy level of the bottom of the conduction band. And vice-versa for E_v. Also, the n is concentration and not number (although you never specify).
 
Thank you Nickjer, you've been a great help!
 
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