Electron concentration in n-type semiconductor 1. The problem statement, all variables and given/known data At T = 0 K, what is the electron concentration in a Si semiconductor that is doped with Phosphorus atoms at ND=1017 cm^-3? At room temperature, what is the electron concentration of this semiconductor? The electron mobility of Si is 1350 cm2/Vs, calculate the resistivity of this semiconductor. Just the bolded part. I'm not sure if the information in the second sentence is relevant to the first part. 2. Relevant equations In the course notes I'm given dozens of equations, but I don't see how any of them would be useful for this question. 3. The attempt at a solution I'm totally clueless, don't even know where to begin.