Electroplating Cu on Cu sputtered Si Substrate (Lithography)

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Electroplating Copper onto a Copper sputtered Silicon substrate has proven challenging, with no deposits forming after several hours of plating using a CuSO4 solution. The patterns on the substrate are 50-100 microns wide and 1600 microns long, and attempts to achieve a smooth deposit have resulted in flaky deposits when using higher currents. Various methods were tried to improve plating, including coating the substrate edges with photoresist, ensuring electrode connectivity, and providing agitation, but none were successful. The user has also diluted the electrolyte in an attempt to achieve a higher voltage and lower current, but the solution remained highly conductive. Clarification on the dilution process and further troubleshooting suggestions are needed to resolve the plating issues.
selseg
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I have been trying to plate Copper on Copper sputtered Electronic grade Silicon Substrate which has been patterned and developed using UV photolithography. The patterns measure about 50-100microns in width and are about 1600microns long. I have tried plating 10micrometer thick Cu using a stock solution of CuSO4. Even several hours after my estimated plating time,no deposits are formed. I estimated the required plating time using Faradays law of electrolysis [t=mFZ/IM]. My last try was with a fixed voltage of 0.03V and the current steadily rose from 0.01mA up to approximately 0.025mA. However when I use large current, tens of mA approximately, flaky deposits form instantly (I want a smooth firm deposit). I have two deposition modes available, constant current and constant voltage. Both of which I can specify down to the nano range. I tried the following to solve the problem they all didnt work out.
1)Coat the sides of the Silicon substrate with photoresist to prevent any prefrential plating on the edges.
2) Ensured that there was connectivity between electrodes and clips.
3) Ensured that the circuit was closed when the substrate was immersed in the electrolyte.
4)Provided adequate agitation.
5)Checked the resistivity of the electrolyte to ensure that the chosen current, in the region of 20mA can flow through the solution at a selected voltage in accordance with Ohms law.
6)Calculated the required plating area and subsequently the current density.
7)I have diluted my electrolyte infinitely to plate at a higher voltage and lower current (didnt work out solution was still highly conductive).I still can't seem to figure out where I have gone wrong.Any suggestions please.
 
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selseg said:
0.01mA up to approximately 0.025mA.
selseg said:
chosen current, in the region of 20mA can flow t
selseg said:
required plating area and subsequently the current density.
7)I have diluted my electrolyte infinitely to plate at a higher voltage and lower current (didnt work out solution was still highly conductive).
It isn't clear that you understand what you're doing; "diluted my electrolyte infinitely" means what?
 
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