Fringe Field of an asymmetrical parallel capacitor

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Discussion Overview

The discussion centers on calculating the fringe field component parallel to the SiO2 surface at the edge of a small metal electrode in an asymmetrical parallel plate capacitor. The context includes theoretical considerations and calculations related to electric fields in capacitors.

Discussion Character

  • Exploratory, Technical explanation, Debate/contested

Main Points Raised

  • One participant describes a scenario involving an asymmetrical parallel plate capacitor with a significantly larger bottom electrode and seeks to calculate the fringe field at the edge of a small metal electrode.
  • Another participant suggests that the bottom electrode can be approximated as an infinite plane and proposes using an image electrode method to simplify the calculation.
  • A clarification is requested regarding the thickness used in the calculation, initially stated as 6 nm but later corrected to 600 nm.
  • There is a question about whether the calculated field thickness refers to vertical or horizontal dimensions, with a specific interest in the horizontal fringe field.
  • A participant notes that calculating the fringe field is complex but suggests using the fringe field of a symmetric capacitor with the corrected thickness of 600 nm between the plates.

Areas of Agreement / Disagreement

Participants do not reach a consensus on the specifics of the calculation method or the interpretation of the thickness, indicating that multiple views and uncertainties remain in the discussion.

Contextual Notes

The discussion involves assumptions about the geometry of the capacitor and the applicability of the infinite plane approximation, which may not hold in all scenarios. The exact nature of the fringe field calculation remains unresolved.

smartmac
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I have a problem bothering me for a long time. Here it is: suppose I have an asymmetrical parallel plate capacitor with one electrode much larger than the other. For example, the capacitor could be made by depositing small-area metal electrode on heavily doped wafer with 300 nm thermal oxide. Is there a way to calculate the fringe field component parallel to the SiO2 surface at the edge of the small metal electrode? A figure is attached to make the question clear. Thanks.
 

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The bottom electrode seems large enough to consider as an infinite plane.
Then you could use an image electrode, so the the field would be that of a capacitor with a
6 nm gap.
 
Thanks. Could you please give some details on how you got the 6 nm thickness?
 
Sorry. I meant 600 nm, twice the space on the picture.
 
Sorry I am still a little bit confused. Is the field calculated with 600 nm thickness vertical or horizontal? I am interested in the horizontal fringe field.
 
It's not an easy calculation, but you calculate the fringe field of a symmetric capacitor with 600 nm between the plates.
 
Thanks, I will try that.
 

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