Generation and recombination in stationary state

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Discussion Overview

The discussion centers on the concepts of generation and recombination in semiconductors, particularly in the context of thermal equilibrium and stationary states. Participants explore the implications of these concepts in both homogeneous and non-homogeneous systems, examining the continuity equation and the conditions under which generation and recombination can be considered equivalent.

Discussion Character

  • Technical explanation
  • Debate/contested

Main Points Raised

  • Some participants assert that in thermal equilibrium, generation and recombination are equivalent due to the absence of time derivatives and spatial gradients in the continuity equation.
  • Others question the equivalence of generation and recombination in stationary states, noting that while time derivatives are absent, spatial gradients remain, allowing for the possibility of a current that compensates for differences in generation and recombination rates.
  • A participant suggests that in homogeneous systems, constant carrier concentrations imply thermal equilibrium, raising questions about the definitions of equilibrium in non-homogeneous systems.
  • Another participant introduces the idea that non-homogeneous systems can be in a form of "equilibrium" without being in thermal equilibrium, where virtual drift and diffusive currents balance out, leading to a divergence-free current condition.
  • One participant emphasizes the distinction between diffusive equilibrium, which involves null currents, and stationary conditions, where net recombination rates for different carriers can be equivalent despite non-zero currents.

Areas of Agreement / Disagreement

Participants express differing views on the relationship between thermal equilibrium and stationary states, with no consensus reached on the implications of these concepts for generation and recombination in semiconductors.

Contextual Notes

Limitations include the potential ambiguity in definitions of equilibrium, the role of spatial gradients in stationary states, and the conditions under which currents can be considered equivalent.

LydiaAC
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I know that in a semiconductor in thermal equilibrium generation and recombination are equivalent. This is obvious from continuity equation since in thermal equilibrium there is no time derivatives nor spatial gradients.
However, I have read that in "stationary state" generation and recombination are also equivalent. That does not have sense to me. You do not have time derivatives but you keep space gradients and it is possible to have a current to compensate for the difference in generation and recombination rates.
Is there something that I am not understanding well?
 
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LydiaAC said:
I know that in a semiconductor in thermal equilibrium generation and recombination are equivalent. This is obvious from continuity equation since in thermal equilibrium there is no time derivatives nor spatial gradients.
However, I have read that in "stationary state" generation and recombination are also equivalent. That does not have sense to me. You do not have time derivatives but you keep space gradients and it is possible to have a current to compensate for the difference in generation and recombination rates.
Is there something that I am not understanding well?

I have only read about "equivalent generation and recombination in stationary state" when the system is homogeneous, since carriers concentration are constant and spatial derivatives vanishes.
 
Hello Matteo83:
But if the system is homogeneous and carrier concentrations are constant. Are not you in thermal equilibrium?
Lydia
 
LydiaAC said:
Hello Matteo83:
But if the system is homogeneous and carrier concentrations are constant. Are not you in thermal equilibrium?
Lydia

Your question is very interesting.
I have never reflected on thermal equilibrium concept in these systems, but I think that solution is in the difference between thermal equilibrium and "equilibrium" that set up in not homogeneous system without external biasing where in every point of space so called "virtual" drift currents are equivalent to "virtual" diffusive currents. "Equilibrium" is then defined by the condition divJ=0.
Not homogeneous systems are intrinsically out of thermal equilibrium but may be in "equilibrium" as for example a pn-junction without biasing.
So if you takes continuity equation in the form \frac{dp}{dt}=-1/e div J_{h} + U_{h} you can see that stationary "equilibrium" state in not homogeneous system may have equivalent generation and recombination.

I' m not sure that this is the right explanation but it seems to be coherent.
If you find a different one I'll be glad to know it.

Matteo
 
LydiaAC said:
However, I have read that in "stationary state" generation and recombination are also equivalent. That does not have sense to me. You do not have time derivatives but you keep space gradients and it is possible to have a current to compensate for the difference in generation and recombination rates.
It looks to me like you will need a divergenceless (i.e., solenoidal) current along a finite path of field-free space.
 
LydiaAC said:
it is possible to have a current to compensate for the difference in generation and recombination rates.

it's possible to have a current to compensate for the difference in generation and recombination rates, sure, but for a single kind of carrier. in stationary state, electron and holes currents give a total current whithout net flux, so NET recombination rates for electrons and NET recombination rates for holes are perfectly equivalent (for example, if I have an excess of holes entering a volume, I have a net flux of holes that recombinate, and so an excess of electrons entering in that volume, bringing to a null net flux of current but not necessarily to a null current). don't confuse diffusive equilibrium, that implicates NULL currents, with stationary condition
 

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