Hardware Random Generators: Transistors vs Diodes

AI Thread Summary
The discussion centers on the effectiveness of using transistor breakdown versus Zener noise for random number generation, specifically in the context of building a white noise generator. The preference leans towards using Germanium due to its superior electron mobility and lower barrier potential. There are inquiries about the performance of Germanium photodiodes, particularly regarding their dark saturation current, which has not been thoroughly tested as a white noise source. The conversation also references the LM336 Zener diode, noting its silicon composition and the lack of data on Germanium diodes' performance spectra. Overall, there is a call for updated insights on hardware random number generators, especially concerning advancements in electro-optical devices.
EinsteinKreuz
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So which method works better for random number generation(in terms of flatter frequency spectrum): transistor breakdown or Zener noise?

I want to know whether to use a Zener diode or a Transistor when building a white noise generator. And FTR I intend to use Germanium because of its higher electron mobility and lower barrier potential.

But what about covered photodiode dark saturation current? Has that even been tested as a white noise source(Germanium photodiodes are much noisier than Silicon photodiodes).
 
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meBigGuy said:
This article addresses some of the issues you will face.

http://www.ciphersbyritter.com/NOISE/NOISRC.HTM

The LM336 Zener diode this fellow used is of course made of SILICON rather than Germanium. I'd be interested to see the performance spectra for a Germanium diode. But I have yet to see any date for Germanium photodiode dark saturation current. I think I'll try the Germanium transistor breakdown noise approach.
But this page is quite dated! Much progress has been made in HRNGs(mainly in terms of electro-optical devices).
 
Not my field. Maybe someone with current knowledge will respond.
 

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