Hardware Random Generators: Transistors vs Diodes

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Discussion Overview

The discussion revolves around the effectiveness of different methods for hardware random number generation, specifically comparing transistor breakdown noise and Zener noise. Participants explore the implications of using Germanium versus Silicon components in the context of white noise generation.

Discussion Character

  • Exploratory, Technical explanation, Debate/contested

Main Points Raised

  • One participant questions which method, transistor breakdown or Zener noise, yields a better frequency spectrum for random number generation.
  • Another participant expresses interest in the performance of Germanium diodes compared to Silicon, particularly regarding their noise characteristics.
  • A participant mentions the potential of using covered photodiode dark saturation current as a white noise source, noting that Germanium photodiodes are noisier than their Silicon counterparts.
  • There is a reference to an article that discusses issues related to noise sources in random number generation, although the relevance of the specific components used is questioned.
  • One participant suggests trying the Germanium transistor breakdown noise approach, indicating a preference for this method over Zener noise.
  • A suggestion is made to consider linear feedback shift registers as a method for generating random sequences.

Areas of Agreement / Disagreement

Participants express differing views on the effectiveness of various components and methods for random number generation. There is no consensus on which approach is superior, and the discussion remains unresolved.

Contextual Notes

Some participants note the lack of current data on Germanium photodiode dark saturation current and the dated nature of existing resources on hardware random number generators.

EinsteinKreuz
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So which method works better for random number generation(in terms of flatter frequency spectrum): transistor breakdown or Zener noise?

I want to know whether to use a Zener diode or a Transistor when building a white noise generator. And FTR I intend to use Germanium because of its higher electron mobility and lower barrier potential.

But what about covered photodiode dark saturation current? Has that even been tested as a white noise source(Germanium photodiodes are much noisier than Silicon photodiodes).
 
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meBigGuy said:
This article addresses some of the issues you will face.

http://www.ciphersbyritter.com/NOISE/NOISRC.HTM

The LM336 Zener diode this fellow used is of course made of SILICON rather than Germanium. I'd be interested to see the performance spectra for a Germanium diode. But I have yet to see any date for Germanium photodiode dark saturation current. I think I'll try the Germanium transistor breakdown noise approach.
But this page is quite dated! Much progress has been made in HRNGs(mainly in terms of electro-optical devices).
 
Not my field. Maybe someone with current knowledge will respond.
 

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