Impurity diffusion vs redistribution in semiconductors

Click For Summary
SUMMARY

Impurity diffusion in semiconductors refers to the movement of dopants during the fabrication process, particularly influenced by heat cycles. Dopant redistribution is the process where impurities move within the semiconductor, often towards the surface. The discussion highlights the diffusion equation, which quantitatively describes how concentration changes over time and space, emphasizing that diffusion occurs from areas of higher concentration to lower concentration. Solid state diffusion is characterized as slower and more temperature-dependent compared to fluid diffusion.

PREREQUISITES
  • Understanding of semiconductor fabrication processes
  • Familiarity with diffusion laws and equations
  • Knowledge of solid state physics
  • Basic concepts of dopant behavior in semiconductors
NEXT STEPS
  • Study the diffusion equation in detail, focusing on its applications in semiconductor physics
  • Explore the impact of temperature on impurity diffusion rates in semiconductors
  • Research techniques for measuring dopant concentration profiles in semiconductor materials
  • Learn about the effects of heat cycles on dopant redistribution during semiconductor fabrication
USEFUL FOR

Semiconductor engineers, materials scientists, and anyone involved in semiconductor fabrication and doping processes will benefit from this discussion.

setareh
Messages
1
Reaction score
0
Hi,
Could any kine soul please explain this to me:

I know that diffusion is movement of impurities (dopants) into the semiconductor especially happening during heat cycles in fabrication process. but what is the dopant redistribution? Is it movement of impurities toward the surface?

Thanks in advance
 
Engineering news on Phys.org
The diffusion follows diffusion laws.

The diffusion equation says:

The rate of change of concentration in time is equal to the rate of change in physical space of the the product of diffusion coefficient and the rate of change of the concentration in physical space.

If your diffusion concentration doesn't change with physical location this reduces to:

The rate of change of concentration in time is equal to the diffusion coefficient times the rate of change of the rate of change of the concentration in space.

What this means is that movement will be toward physical locations of higher concentration to less concentration - just like most familiar cases of diffusion are probably understood intuitively. Solid state diffusion is really no different from fluid diffusion in a liquid or a gas only far slower and/or more temperature dependent.
 

Similar threads

Replies
1
Views
2K
  • · Replies 1 ·
Replies
1
Views
2K
  • · Replies 22 ·
Replies
22
Views
6K
  • · Replies 4 ·
Replies
4
Views
4K
  • · Replies 4 ·
Replies
4
Views
7K
  • · Replies 15 ·
Replies
15
Views
5K
  • · Replies 4 ·
Replies
4
Views
9K
  • · Replies 3 ·
Replies
3
Views
5K
  • · Replies 28 ·
Replies
28
Views
4K
  • · Replies 32 ·
2
Replies
32
Views
10K