NascentOxygen said:
The voltage changes in small-signal BJT operation can be too small to be accurately measured. Being too miniscule and so changeable with temperature and from device to device means it is not repeatable and the BJT does not lend itself to predictable stable voltage-based design here.
Good point. Also FWIW, a voltage source across the b-e junction of a bjt is destructive. With voltage control or voltage drive, a current is present in the b-e junction. That current times the source voltage is the power dissipated. He temperature increases due to this power, and the current increases because silicon is more conductive at increased temp. Voltage stays fixed w/ increased current so that power increases.
Increases power increases the temp, which makes the silicon more conductive. Current increases, as does power, increasing temp, increasing current, etc. We all know what thermal runaway means. We cannot control a bjt by controlling voltage directly. We can instead control its current.
A current source across the b-e junction establishes a fixed current and a voltage determined by the silicon junction characteristics. The product of current & voltage is the power, which results in a temperature rise. Silicon is more conductive at increased temp. But with current drive this is a stable condition. An increase in conductance of silicon means that the resistance decreases. With current drive, the voltage drops as temp increases. Thus the power drops, and thermal runaway does not happen.
The bjt device obviously needs both current and voltage to operate, and one w/o the other cannot happen (except in photo-transistors where I or V can exist alone). But only 1 of them is the directly controlled quantity with the other indirect, determined by material & physics laws. If we control the current we get thermal stability. If we control the voltage we get a pile of ashes.
There is a good reason why things are defined the way they are. Again, the importance of voltage is universally acknowledged. Nobody in the know overlooks voltage when analyzing a bjt. If I wish to drive a b-e junction from a 3.3V source, I scale the resistor properly based on V
BE and the 3.3V source. But if my source is 1.2 volts,and I wish to drive the 3 b-e junctions of a triple Darlington bjt device, well, I am going to use a different source, one w/ a higher voltage.
I never neglect V
BE because I know it is important, as is I
B, as is I
E, as is V
CE, as is thermal coefficient, temperature, etc. We don't control a bjt with these other quantities like V
BE or V
CE, but we include them in our computations. I will elaborate if needed. BR.
Claude