1. The problem statement, all variables and given/known data A certain doped semiconductor at room temperature has the following properties: no = 9 x 1014 / cm3, po = 4 x 1014 / cm3, μe = 800 cm2 / V-s, μh = 400 cm2 / V-s, and (Dh[itex]\tau[/itex]h)1/2 = 10-4 cm. If an electric field is applied, what fraction of the resulting drift current flow will be due to electrons? 2. Relevant equations Not sure. 3. The attempt at a solution I have no idea what to do, but the answer is 0.82 (according to the book).