Resistivity and Voltage in Intrinsic and Extrinsic Silicon Samples

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Intrinsic silicon has a resistivity of 2.3*10^3 Ωm, while n-type extrinsic silicon has a significantly lower resistivity of 8.33*10^-2 Ωm. A bar of extrinsic silicon with dimensions 50*1000 mm carries a steady current of 100μA, resulting in a voltage of 50 mV across it. The discussion highlights the application of Ohm's law in calculating voltage, although concerns about non-linear current flow in semiconductors were raised. Despite potential deviations in extreme conditions, Ohm's law remains applicable for typical scenarios.
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Homework Statement



The resistivity at room temperature of intrinsic silicon is 2.3*103 Ωm and that of an "n" type extrinsic silicon sample is 8.33*10-2Ωm . A bar of this extrinsic silicon with 50*1000 mm has a steady current of 100μA across it. The voltage across the bar is found to be 50 mVolt.If the same bar is of intrinsic silicon,the voltage across the bar will be ?

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The Attempt at a Solution

 
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I think you forgot to fill out part 2 and 3 of the homework template. In other words: What do you know about conduction? What did you do so far? Where did you run into problems?
 
mfb said:
I think you forgot to fill out part 2 and 3 of the homework template. In other words: What do you know about conduction? What did you do so far? Where did you run into problems?

The thing is i solved the question by using ohm's law but when i asked someone they said current flow through semiconductor is not linear and it won't follow V=IR so that is why i was confused.
 
There is a point where deviations from Ohm's law appear due to collision processes caused by very high internal electric fields. This is called the "hot electron" regime. It takes some effort to get there, however, so you needn't worry about it for common and practical systems. Ohm's law works fine in general.
 
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