Si IGBT and SiC MOSFET comparison

MOSFET. In summary, the main difference between Si IGBT and SiC MOSFET is the presence of a p region in IGBT that allows for minority charge injection, making it a minority carrier device with lower on-resistance compared to the majority carrier device, MOSFET.
  • #1
ZeroFunGame
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TL;DR Summary
Please see below.
I am trying to understand the difference between an Si IGBT and SiC MOSFET. The device structure in question is the following:

https://www.researchgate.net/figure/Comparison-between-Si-IGBT-and-SiC-MOSFET-modules-a-Cross-section-of-Trench-FS-Si-IGBT_fig6_318908365

It's hard to understand why one is a MOSFET and the other is an IGBT. They both look the same, other than the inversion layer looks vertical for the IGBT and the MOSFET is lateral. I'm not sure what I'm missing in understanding how these two devices are fundamentally unique. Any feedback appreciated!
 
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  • #2
MOSFET and IGBT have a very similar structure, but the most important difference is the p region connected to the IGBT collector. Its function is to inject minority charges into the n- region while IGBT is in the on state. This makes IGBT a minority carrier device while MOSFET is a majority carrier device which results in decreased on-resistance of IGBT
 

FAQ: Si IGBT and SiC MOSFET comparison

What is the difference between Si IGBT and SiC MOSFET?

The main difference between Si IGBT (Insulated Gate Bipolar Transistor) and SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) lies in their material composition. Si IGBT is made of silicon, while SiC MOSFET is made of silicon carbide. This difference in material affects their performance and characteristics.

Which one is more efficient, Si IGBT or SiC MOSFET?

SiC MOSFET is generally considered to be more efficient than Si IGBT. This is due to the lower resistance and faster switching speed of SiC MOSFET, which results in less power loss and higher efficiency.

What are the advantages of SiC MOSFET over Si IGBT?

SiC MOSFET has several advantages over Si IGBT, including higher breakdown voltage, lower on-resistance, faster switching speed, and better thermal conductivity. These advantages make SiC MOSFET suitable for high-power and high-frequency applications.

Are there any disadvantages of using SiC MOSFET?

One of the main disadvantages of SiC MOSFET is its higher cost compared to Si IGBT. Additionally, SiC MOSFET requires more complex driving circuitry and may have reliability issues at high temperatures. However, advancements in technology are addressing these challenges.

In which applications are Si IGBT and SiC MOSFET commonly used?

Si IGBT is commonly used in applications that require high voltage and low switching frequency, such as in power supplies and motor drives. SiC MOSFET, on the other hand, is suitable for high-power and high-frequency applications, such as in electric vehicles, solar inverters, and industrial motor drives.

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