Si IGBT and SiC MOSFET comparison

[ZeroFunGame]

TL;DR

Please see below.

I am trying to understand the difference between an Si IGBT and SiC MOSFET. The device structure in question is the following:

https://www.researchgate.net/figure/Comparison-between-Si-IGBT-and-SiC-MOSFET-modules-a-Cross-section-of-Trench-FS-Si-IGBT_fig6_318908365

It's hard to understand why one is a MOSFET and the other is an IGBT. They both look the same, other than the inversion layer looks vertical for the IGBT and the MOSFET is lateral. I'm not sure what I'm missing in understanding how these two devices are fundamentally unique. Any feedback appreciated!

 

[zoki85]

MOSFET and IGBT have a very similar structure, but the most important difference is the p region connected to the IGBT collector. Its function is to inject minority charges into the n^- region while IGBT is in the on state. This makes IGBT a minority carrier device while MOSFET is a majority carrier device which results in decreased on-resistance of IGBT