Understanding the Physics Behind Common Emitter Transistors

AI Thread Summary
The discussion focuses on the physics of common emitter transistor configurations, particularly the relationship between base current and collector current. It highlights confusion regarding why increasing base current leads to an increase in collector current, contrary to the expectation that more recombination in the base would decrease collector current. Participants clarify that the biasing and physical operation of the bipolar junction transistor (BJT) remain constant across configurations, with the primary differences arising from the topological connections. Understanding these connections is crucial for grasping the gain and impedance characteristics of the common emitter configuration. Overall, the discussion emphasizes the importance of topology in transistor behavior.
Garoll
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Hello,

I would like to ask someone to explain me the basic physics of the common emitter configuration.
With the common base configuration i am understanding all the processes with holes and electrons in the npn transistor perfectly.
In the common emitter configuration i can`t understand why the collector current is increasing when we increase the base current. My logic leads me to the fact that when the base current is increased there should be more recombination in the base with electrons from the emitter and the collector current should decrease, but it is exactly the opposite.

I would appreciate if someone could help me with this issue.

Regards
 
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Absolutely nothing actually changes in terms of bias (all common-X are linear bias) or physical operation of the BJT itself.

The big difference in the resultant terminal-to-terminal gain and impedance seen that result from the *topological* difference of connections.
 
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