What is the significance of normalized data in NMOSFET parameter extraction?

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Normalized data in NMOSFET parameter extraction refers to adjusting measurements to a standard width, which allows for consistent comparisons across devices. In this case, the Id data normalized to w=1μmeter means that to extract the actual Ids for a device with w=10μmeter, the value should be multiplied by 10. Low-field mobility (μ0) is not constant across all NMOSFETs; variations can occur due to factors like fabrication processes and material properties, leading to discrepancies between default and extracted values. The BSIM guide's default value serves as a general reference but may not reflect specific device characteristics. Understanding these concepts is crucial for accurate NMOSFET analysis and modeling.
Aseth
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Hey! I'm doing a lab assignment and need some guidance.

i have measurement with L=1μmeter and w=10μmeter, but the id data is normalized to w=1μmeter, what does it mean?

do I need to get Ids "un-normalized" for extraction, like Ids*1e-6= new Ids


the second question is about low-field mobility, does the low-field mobility μ0 equal for all NMOSFETs? the BSIM guide Iam using have default value is 670 cm^2/Vsec for NMOSFET. but the extracted value is like 200cm^2/Vsec, I'm confused.

I don't know if this is the right sub-forum for posting those questions, please moderators change it to appropriate sub-forum if needed.

Thanks in advance
 
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The general MOSFET equation is Id = mu Cox W/L ((Vgs-Vth) Vds - Vds^2/2). This is the W/L they are referring to.
 
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