Why Do (110) Silicon Wafers Form Perpendicular Trenches with (111)?

AI Thread Summary
The discussion focuses on the anisotropic etching of (110) silicon wafers, specifically why they form perpendicular trenches with the (111) orientation. It is noted that if the etching process is genuinely anisotropic, the walls of the etched features will be perpendicular to the wafer surface. This relationship between the orientations is crucial for understanding the etching behavior and the resulting trench geometry. The conversation emphasizes the importance of crystal orientation in determining etching outcomes. Understanding these principles is essential for applications in semiconductor manufacturing and materials science.
Lenei
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Regarding the anisotropic etching of the (110) silicon wafer, why will the (110) oriented wafers form perpendicular trenches with the (111)?
 
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Lenei said:
Regarding the anisotropic etching of the (110) silicon wafer, why will the (110) oriented wafers form perpendicular trenches with the (111)?

If the etching is truly anisotropic, the walls of the etched features should be perpendicular to the surface of the wafer.
 

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