Why is there reverse current in diode equation?

AI Thread Summary
The discussion centers on the presence of reverse current in the diode equation, despite the assumption of no drift during its derivation. It highlights that even without bias, diffusion currents occur between n-type and p-type materials due to electron concentration differences, which are crucial for diode operation. The depletion zone created by these currents is responsible for drift currents, particularly in applications like photodiodes, where external reverse bias enhances current. Additionally, temperature-dependent leakage currents arise from the thermal generation of electron-hole pairs, which is influenced by temperature. Understanding these concepts is essential for grasping diode behavior and performance.
satominari
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When deriving diode equation, it is assumed that there's no drift.
But still, in the result, we have a reverse current which is a drift...
I don't get where this comes from.
 
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Even when the diode is not biased there is a diffusion current from n-type material to the p-type material because of difference in electron concentrations similar to the hole diffusion current from p-type material to the n-type material. These opposite currents carry like charges accumulating on he edges of the depletion zone while canceling each other within the depletion zone. These diffusion phenomenon is essential for the operational principal of the diods.
 
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Yes. So created depletion zone is responsible for drift currents. Imagine the photoelectric effect for photo diods. Photons falling on the depletion zone of the diods liberate electrons biased by the electric fields already created by the diffusion currents. In a photo diod circuit, an external reverse bias is also applied to increase the photo diot current (signal).
 
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You will most likely have a temperature-dependent leakage current. Also see post #3.
 
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Svein said:
You will most likely have a temperature-dependent leakage current. Also see post #3.

Thanks for the reply. But could you explain or give me a link about temperature dependent leakage current? Thank you so much!
 
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The minority carriers being discussed above are generated by random thermal generation of electron-hole pairs. The generation rate is temperature dependent.
 
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